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BSZ036NE2LSATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 25V 16A 8-Pin TSDSON
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Inventory: 28782
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.208717
≥1 USD $0.208717
≥10 USD $0.202578
≥100 USD $0.196439
≥500 USD $0.188766

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 37W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 3.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 12V
Current - Continuous Drain (Id) @ 25°C 16A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 2.8 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
Avalanche Energy Rating (Eas) 40 mJ

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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