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SISS27DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8S
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 50A PPAK 1212-8S
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Inventory: 21449
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.214516
≥1 USD $0.214516
≥10 USD $0.208207
≥100 USD $0.201897
≥500 USD $0.194011

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8S
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -50°C~150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 4.8W Ta 57W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.8W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5250pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) -23A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.0056Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 200A
Max Junction Temperature (Tj) 150°C

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Dimensions

Height 830μm

Alternative Model

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