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BSC050N04LSGATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 40V 18A 8-Pin TDSON EP
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Inventory: 45125
Minimum: 1
Total Price: USD $0.51
Unit Price: USD $0.507728
≥1 USD $0.507728
≥10 USD $0.416955
≥100 USD $0.403988
≥500 USD $0.39102
≥1000 USD $0.378053

Technical Details

Supply Chain

Factory Lead Time 39 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 57W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 57W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 27μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 20V
Current - Continuous Drain (Id) @ 25°C 18A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 3.8 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 85A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0072Ohm
Pulsed Drain Current-Max (IDM) 340A
Avalanche Energy Rating (Eas) 35 mJ

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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