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STD17NF03L-1

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET, N CH, 30V, 17A, IPAK
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Inventory: 26529
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.277744
≥1 USD $0.277744
≥10 USD $0.269575
≥100 USD $0.261406
≥500 USD $0.251195

Technical Details

Supply Chain

Lifecycle Status NRND (Last Updated: 8 months ago)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET? II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD17
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V
Rise Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 68A
Avalanche Energy Rating (Eas) 200 mJ
Max Junction Temperature (Tj) 175°C
Nominal Vgs 1.5 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 8.4mm
Length 6.6mm
Width 2.4mm

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
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