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BSC028N06NSATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 23A TDSON-8
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Inventory: 224391
Minimum: 1
Total Price: USD $0.93
Unit Price: USD $0.930668
≥1 USD $0.930668
≥10 USD $0.764085
≥100 USD $0.740145
≥500 USD $0.716205
≥1000 USD $0.692265

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 83W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 30V
Current - Continuous Drain (Id) @ 25°C 23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 23A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 400A

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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