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IRF6614TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric ST
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 12.7A DIRECTFET
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Inventory: 26047
Minimum: 1
Total Price: USD $4.93
Unit Price: USD $4.933635
≥1 USD $4.933635
≥10 USD $4.047855
≥100 USD $3.92217
≥500 USD $3.795488
≥1000 USD $3.668805

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric ST
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 8.3MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 12.7A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.3m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2560pF @ 20V
Current - Continuous Drain (Id) @ 25°C 12.7A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Rise Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 10.1A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 22 mJ

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 506μm
Length 4.826mm
Width 3.95mm

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