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IPD053N08N3GATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) TO-252 T/R
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Inventory: 1837
Minimum: 1
Total Price: USD $6.51
Unit Price: USD $6.512678
≥1 USD $6.512678
≥10 USD $5.343608
≥100 USD $5.177025
≥500 USD $5.009445
≥1000 USD $4.842863

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55┬?C~175┬?C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOSō?ó
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m ╬? @ 90A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90╬╝A
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 40V
Current - Continuous Drain (Id) @ 25┬?C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 66 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ┬?20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 90A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Avalanche Energy Rating (Eas) 190 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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