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IRF6644TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric MN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 10.3A DIRECTFET
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Inventory: 601565
Minimum: 1
Total Price: USD $0.49
Unit Price: USD $0.492299
≥1 USD $0.492299
≥10 USD $0.477819
≥100 USD $0.46334
≥500 USD $0.445241

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 10.3A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id 4.8V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.3A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 8.3A
Threshold Voltage 4.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 228A
Avalanche Energy Rating (Eas) 86 mJ
Nominal Vgs 4.8 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 508μm
Length 6.35mm
Width 5.0546mm

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MN
Number of Pins 5
Transistor Element Material SILICON

Alternative Model

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