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SI7115DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 150V 8.9A 1212-8
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Inventory: 1149
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.192437
≥1 USD $0.192437
≥10 USD $0.186777
≥100 USD $0.181117
≥500 USD $0.174042

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 295mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 295m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 50V
Current - Continuous Drain (Id) @ 25°C 8.9A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 28 ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 2.3A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Nominal Vgs -2 V

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.04mm
Length 3.05mm
Width 3.05mm

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