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SI7450DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 3.2A PPAK SO-8
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Inventory: 3849
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.578017
≥1 USD $0.578017
≥10 USD $0.561017
≥100 USD $0.544016
≥500 USD $0.522765

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Manufacturer Package Identifier S17-0173-Single

Dimensions

Height 1.17mm
Length 4.9mm
Width 5.89mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 80mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 3.2A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 40A
Max Junction Temperature (Tj) 150°C
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