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CSD17570Q5B

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 100A 8VSON
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Inventory: 2185
Minimum: 1
Total Price: USD $2.1
Unit Price: USD $2.09748
≥1 USD $2.09748
≥10 USD $1.739892
≥100 USD $1.384522
≥500 USD $1.171521
≥1000 USD $0.994012

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17570
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.69m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 121nC @ 4.5V
Rise Time 36 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 144 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 53A
Drain-source On Resistance-Max 0.00092Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 360A
Avalanche Energy Rating (Eas) 450 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Dimensions

Length 5mm
Width 6mm
Thickness 950μm
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