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TPH2900ENH,L1Q

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 33A SOP8
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Inventory: 17229
Minimum: 1
Total Price: USD $2.23
Unit Price: USD $2.22684
≥1 USD $2.22684
≥10 USD $1.849848
≥100 USD $1.472671
≥500 USD $1.246088
≥1000 USD $1.057287
≥3000 USD $1.004425

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 78W Tc
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 29m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 33A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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