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SQJ469EP-T1_GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SQJ469EP-T1-GE3 MOSFET Transistor, P Channel, -32 A, -80 V, 0.021 ohm, -10 V, -2 V
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Inventory: 8318
Minimum: 1
Total Price: USD $0.91
Unit Price: USD $0.908385
≥1 USD $0.908385
≥10 USD $0.881668
≥100 USD $0.85495
≥500 USD $0.821554

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Supplier Device Package PowerPAK? SO-8
Weight 506.605978mg

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 100W Tc
Element Configuration Single
Power Dissipation 100W
Turn On Delay Time 16 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 40V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) -32A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -80V
Input Capacitance 5.1nF
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 45mOhm
Rds On Max 25 mΩ
Nominal Vgs -2 V

Dimensions

Height 1.267mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

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