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STD12NF06L-1

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 60 Volt 12 Amp
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Inventory: 1518
Minimum: 1
Total Price: USD $0.14
Unit Price: USD $0.135017
≥1 USD $0.135017
≥10 USD $0.131046
≥100 USD $0.127075
≥500 USD $0.122111

Technical Details

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET? II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 100mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 12A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD12
Pin Count 3
Number of Elements 1
Power Dissipation-Max 42.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Rise Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 48A

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 2.4mm
Length 6.6mm
Width 6.2mm

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