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BSC026N08NS5ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 80V 23A 8TDSON
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Inventory: 9038
Minimum: 1
Total Price: USD $0.76
Unit Price: USD $0.758788
≥1 USD $0.758788
≥10 USD $0.736471
≥100 USD $0.714154
≥500 USD $0.686257

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Dimensions

Height 1.1mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 115μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 40V
Current - Continuous Drain (Id) @ 25°C 23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Rise Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 370 mJ
Max Junction Temperature (Tj) 150°C

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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