Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 7.8mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 200W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.8m Ω @ 78A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 150 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 140 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 520A
Dual Supply Voltage 75V
Nominal Vgs 4 V