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FDMS86150

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 100V 16A POWER56
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Inventory: 5947
Minimum: 1
Total Price: USD $2.19
Unit Price: USD $2.187245
≥1 USD $2.187245
≥10 USD $2.063439
≥100 USD $1.946637
≥500 USD $1.83645
≥1000 USD $1.7325

Technical Details

Supply Chain

Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 56.5mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.7W Ta 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.85m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4065pF @ 50V
Current - Continuous Drain (Id) @ 25°C 16A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Rise Time 8.3 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 60A
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 726 mJ

Dimensions

Height 1.05mm
Length 5.1mm
Width 6.25mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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