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FDB5800

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 80A D2PAK
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Inventory: 103
Minimum: 1
Total Price: USD $4.56
Unit Price: USD $4.556091
≥1 USD $4.556091
≥10 USD $3.972329
≥100 USD $3.626192
≥500 USD $4.33713
≥1000 USD $4.192493

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON

Technical

Operating Temperature -55┬?C~175┬?C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench┬?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 6MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 242W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 242W
Case Connection DRAIN
Turn On Delay Time 20.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m ╬? @ 80A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250╬╝A
Input Capacitance (Ciss) (Max) @ Vds 6625pF @ 15V
Current - Continuous Drain (Id) @ 25┬?C 14A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ┬?20V
Fall Time (Typ) 12.1 ns
Turn-Off Delay Time 27.1 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 652 mJ

Dimensions

Height 4.83mm
Length 10.67mm
Width 11.33mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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