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SI2325DS-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 150V 0.53A SOT23-3
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Inventory: 19037
Minimum: 1
Total Price: USD $0.16
Unit Price: USD $0.164329
≥1 USD $0.164329
≥10 USD $0.159496
≥100 USD $0.154662
≥500 USD $0.148621

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Dimensions

Height 1.12mm
Length 3.04mm
Width 1.4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.2Ohm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 750mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 530mA Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) -690mA
Threshold Voltage -4.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Max Junction Temperature (Tj) 150°C

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Alternative Model

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