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BSC010NE2LSIATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 25V 38A 8-Pin TDSON EP
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Inventory: 18514
Minimum: 1
Total Price: USD $0.32
Unit Price: USD $0.315635
≥1 USD $0.315635
≥10 USD $0.306352
≥100 USD $0.297069
≥500 USD $0.285464

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 96W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 12V
Current - Continuous Drain (Id) @ 25°C 38A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 6.2 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 38A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
Pulsed Drain Current-Max (IDM) 400A

Alternative Model

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