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BSC010N04LSATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description INFINEON BSC010N04LSMOSFET Transistor, N Channel, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
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Inventory: 206950
Minimum: 1
Total Price: USD $1.07
Unit Price: USD $1.071315
≥1 USD $1.071315
≥10 USD $0.879795
≥100 USD $0.851865
≥500 USD $0.824933
≥1000 USD $0.797003

Technical Details

Supply Chain

Factory Lead Time 39 Weeks

Dimensions

Height 1.1mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2003
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 139W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 20V
Current - Continuous Drain (Id) @ 25°C 38A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 330 mJ
Max Junction Temperature (Tj) 150°C

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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