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RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 950V 9A 3-Pin(2+Tab) DPAK T/R
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Inventory: 13287
Minimum: 1
Total Price: USD $0.27
Unit Price: USD $0.272289
≥1 USD $0.272289
≥10 USD $0.264281
≥100 USD $0.256272
≥500 USD $0.246261

Technical Details

Supply Chain

Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SuperMESH5?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.25Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD6N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 90W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.25 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 950V
Avalanche Energy Rating (Eas) 90 mJ
Nominal Vgs 4 V
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