Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 17mOhm
Technology MOSFET (Metal Oxide)
Base Part Number STY139
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 625W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625W
Turn On Delay Time 295 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 65A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 363nC @ 10V
Rise Time 56 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 295 ns
Continuous Drain Current (ID) 130A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 520A
Avalanche Energy Rating (Eas) 2400 mJ
Max Junction Temperature (Tj) 150°C