Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
Series U-MOSIII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 150mW Ta
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 630m Ω @ 200mA, 5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 10V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 4V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 5V
Vgs (Max) ±10V
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 10V