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BSC067N06LS3GATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R
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Inventory: 250049
Minimum: 1
Total Price: USD $0.85
Unit Price: USD $0.84588
≥1 USD $0.84588
≥10 USD $0.69426
≥100 USD $0.672315
≥500 USD $0.651368
≥1000 USD $0.629423
≥3000 USD $0.564585

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Compliance

Lead Free Contains Lead
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35μA
Halogen Free Halogen Free
Avalanche Energy Rating (Eas) 47 mJ
Pulsed Drain Current-Max (IDM) 200A
Drain-source On Resistance-Max 0.0067Ohm
Max Dual Supply Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 37 ns
Fall Time (Typ) 7 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 26 ns
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Ta 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 30V

Alternative Model

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