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SI4100DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
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Inventory: 30385
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.087132
≥1 USD $0.087132
≥10 USD $0.08457
≥100 USD $0.082007
≥500 USD $0.078804

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 63m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 12 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 4.4A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.063Ohm
Pulsed Drain Current-Max (IDM) 20A

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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