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FDMC510P

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 20V 12A 8-Pin MLP T/R
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Inventory: 126300
Minimum: 1
Total Price: USD $1.55
Unit Price: USD $1.551113
≥1 USD $1.551113
≥10 USD $1.27281
≥100 USD $1.23291
≥500 USD $1.19301
≥1000 USD $1.15311

Technical Details

Supply Chain

Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Dimensions

Height 750μm
Length 3.3mm
Width 3.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 41W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 41W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7860pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs 116nC @ 4.5V
Rise Time 34 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 170 ns
Turn-Off Delay Time 338 ns
Continuous Drain Current (ID) 12A
Threshold Voltage -500mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 54A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 37 mJ

Physical

Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 165.33333mg
Transistor Element Material SILICON

Alternative Model

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