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STP40NF03L

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 40A TO-220
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Total Price: USD $0.12
Unit Price: USD $0.123056
≥1 USD $0.123056
≥10 USD $0.119436
≥100 USD $0.115817
≥500 USD $0.111293

Technical Details

Supply Chain

Lifecycle Status NRND (Last Updated: 8 months ago)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 22mOhm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 40A
Base Part Number STP40N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 80 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 1.7V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 250 mJ

Dimensions

Height 9.15mm
Length 10.4mm
Width 4.6mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Alternative Model

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