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FQB33N10LTM

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R
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Inventory: 13635
Minimum: 1
Total Price: USD $0.64
Unit Price: USD $0.641284
≥1 USD $0.641284
≥10 USD $0.622422
≥100 USD $0.603561
≥500 USD $0.579984

Technical Details

Supply Chain

Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 52MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 33A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.75W Ta 127W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.75W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
Rise Time 470 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V

Dimensions

Height 4.83mm
Length 10.67mm
Width 9.65mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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