Welcome to AAA CHIPS! ｜
mobile logo

All Products

View All Products

IRF640NSTRLPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 18A D2PAK
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 19511
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.211535
≥1 USD $0.211535
≥10 USD $0.205313
≥100 USD $0.199092
≥500 USD $0.191315

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 150mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 18A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 72A
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 247 mJ
Recovery Time 251 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 4 V

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 5.084mm
Length 10.668mm
Width 9.65mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

Alternative Model

Recommended For You

IRF640NSTRLPBF price comparison, buy IRF640NSTRLPBF online, IRF640NSTRLPBF datasheet pdf download, find IRF640NSTRLPBF in stock, where to buy IRF640NSTRLPBF, IRF640NSTRLPBF price and availability, buy IRF640NSTRLPBF with fast shipping, order IRF640NSTRLPBF online, IRF640NSTRLPBF supplier near me, IRF640NSTRLPBF product tutorial, how to use IRF640NSTRLPBF, IRF640NSTRLPBF download software/manual