SI7852ADP-T1-GE3

Vishay Siliconix

RoHS

RoHS compliant

Package PowerPAK? SO-8

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Single N-Channel 80 V 0.017 Ohm SMT TrenchFET Power Mosfet - PowerPAK SO-8

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Inventory: 8475

Minimum: 1

Total Price: USD $0.9

Unit Price: USD $0.901582

≥1 USD $0.901582

≥10 USD $0.875065

≥100 USD $0.848548

≥500 USD $0.815402

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Dimensions

Height 1.12mm

Length 4.9mm

Width 5.89mm

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Published 2012

Series TrenchFET?

JESD-609 Code e3

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 5

ECCN Code EAR99

Resistance 17MOhm

Terminal Finish MATTE TIN

Subcategory FET General Purpose Power

Technology MOSFET (Metal Oxide)

Terminal Position DUAL

Terminal Form C BEND

Peak Reflow Temperature (Cel) 260

Time@Peak Reflow Temperature-Max (s) 40

Pin Count 8

JESD-30 Code R-XDSO-C5

Number of Elements 1

Number of Channels 1

Power Dissipation-Max 5W Ta 62.5W Tc

Element Configuration Single

Operating Mode ENHANCEMENT MODE

Power Dissipation 5W

Case Connection DRAIN

Turn On Delay Time 16 ns

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 17m Ω @ 10A, 10V

Vgs(th) (Max) @ Id 4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 1825pF @ 40V

Current - Continuous Drain (Id) @ 25°C 30A Tc

Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V

Rise Time 9 ns

Drive Voltage (Max Rds On,Min Rds On) 8V 10V

Vgs (Max) ±20V

Fall Time (Typ) 9 ns

Turn-Off Delay Time 26 ns

Continuous Drain Current (ID) 30A

Threshold Voltage 4.5V

Gate to Source Voltage (Vgs) 20V

Drain to Source Breakdown Voltage 80V

Pulsed Drain Current-Max (IDM) 60A

Avalanche Energy Rating (Eas) 45 mJ

Max Junction Temperature (Tj) 150°C

Compliance

Radiation Hardening No

REACH SVHC Unknown

RoHS Status ROHS3 Compliant

Lead Free Lead Free

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