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IRF7480MTRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric ME
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description On a Reel of 4800, N-Channel MOSFET, 330 A, 40 V, 6 + Tab-Pin ME Infineon IRF7480MTRPBF
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Inventory: 3982
Minimum: 1
Total Price: USD $0.97
Unit Price: USD $0.972479
≥1 USD $0.972479
≥10 USD $0.820014
≥100 USD $0.736226
≥500 USD $0.642825
≥1000 USD $0.486239
≥1000 USD $0.46701

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric ME
Number of Pins 10
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET?, StrongIRFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 96W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 132A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 217A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 58 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 217A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 868A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 206 mJ

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