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FDS86141

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 7A 8-SOIC
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Inventory: 7488
Minimum: 1
Total Price: USD $2.06
Unit Price: USD $2.06052
≥1 USD $2.06052
≥10 USD $1.708476
≥100 USD $1.359758
≥500 USD $1.150565
≥1000 USD $0.976243

Technical Details

Supply Chain

Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Turn On Delay Time 8.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 934pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Rise Time 3.2 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.2 ns
Turn-Off Delay Time 14.3 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 3.1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.023Ohm
Drain to Source Breakdown Voltage 100V
Nominal Vgs 3.1 V

Dimensions

Height 1.5mm
Length 4mm
Width 5mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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