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RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 200V 5.7A DPAK
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Inventory: 8005
Minimum: 1
Total Price: USD $0.22
Unit Price: USD $0.221099
≥1 USD $0.221099
≥10 USD $0.214596
≥100 USD $0.208093
≥500 USD $0.199964

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 2.3mm
Length 6.6mm
Width 6.1mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 690mOhm
Subcategory Other Transistors
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -5.7A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Voltage 150V
Power Dissipation-Max 2.5W Ta 55W Tc
Element Configuration Single
Current 13A
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 690m Ω @ 2.85A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 110 ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 5.7mA
Threshold Voltage -5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -200V
Avalanche Energy Rating (Eas) 570 mJ
Nominal Vgs 5 V
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