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RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 10A 8-SOIC
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Inventory: 8319
Minimum: 1
Total Price: USD $0.9
Unit Price: USD $0.89628
≥1 USD $0.89628
≥10 USD $0.731808
≥100 USD $0.569092
≥500 USD $0.482402
≥1000 USD $0.392968
≥3000 USD $0.369933

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Height 1.75mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 20mOhm
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -10A
Number of Elements 1
Row Spacing 6.3 mm
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 18 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Rise Time 49 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) -10A
Threshold Voltage -2.04V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 45A
Dual Supply Voltage -30V
Avalanche Energy Rating (Eas) 370 mJ
Recovery Time 85 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -20 V
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