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SI4435DY

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
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Inventory: 40917
Minimum: 1
Total Price: USD $0.04
Unit Price: USD $0.043652
≥1 USD $0.043652
≥10 USD $0.042368
≥100 USD $0.041084
≥500 USD $0.03948

Technical Details

Supply Chain

Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)

Dimensions

Height 1.57mm
Length 4.9mm
Width 3.9mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 20MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -8.8A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 16 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 8.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1604pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V
Rise Time 13.5 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) -8.8A
Threshold Voltage -1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
Nominal Vgs -1.7 V

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON

Alternative Model

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