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CSD18534Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 8SON
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Inventory: 1175
Minimum: 1
Total Price: USD $0.78
Unit Price: USD $0.782103
≥1 USD $0.782103
≥10 USD $0.737835
≥100 USD $0.696066
≥500 USD $0.65667
≥1000 USD $0.6195

Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD18534
Number of Elements 1
Power Dissipation-Max 3.1W Ta 77W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 5.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.8m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 30V
Current - Continuous Drain (Id) @ 25°C 13A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 5.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 229A
Nominal Vgs 1.9 V
Feedback Cap-Max (Crss) 6.5 pF

Dimensions

Height 1.1mm
Length 4.9mm
Width 6mm
Thickness 1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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