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SI7810DN-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 3.4A 1212-8
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Inventory: 8902
Minimum: 1
Total Price: USD $1.34
Unit Price: USD $1.3398
≥1 USD $1.3398
≥10 USD $1.096788
≥100 USD $0.853129
≥500 USD $0.723104
≥1000 USD $0.58905

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 62mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 62m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 20A
Nominal Vgs 4.5 V

Dimensions

Height 1.04mm
Length 3.05mm
Width 3.05mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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