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RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R
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Inventory: 13611
Minimum: 1
Total Price: USD $1
Unit Price: USD $0.99792
≥1 USD $0.99792
≥10 USD $0.818664
≥100 USD $0.637098
≥500 USD $0.540005
≥1000 USD $0.439889

Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Height 1.1mm
Length 3.3mm
Width 3.3mm
Thickness 1mm

Compliance

REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD16327
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 5.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 24A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 6.3 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.0065Ohm
Drain to Source Breakdown Voltage 25V
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 65 pF
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