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IRLML0030TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 5.3A SOT-23-3
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Inventory: 204761
Minimum: 1
Total Price: USD $0.01
Unit Price: USD $0.007624
≥1 USD $0.007624
≥10 USD $0.0074
≥100 USD $0.007176
≥500 USD $0.006895

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 1.12mm
Length 3.0226mm
Width 1.397mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 27MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 5.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id 2.3V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 382pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 2.6nC @ 4.5V
Rise Time 4.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 7.4 ns
Continuous Drain Current (ID) 5.3A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Recovery Time 17 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.7 V

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