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SI1032R-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SC-75A
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 140MA SC-75A
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Inventory: 38045
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.146633
≥1 USD $0.146633
≥10 USD $0.120698
≥100 USD $0.116708
≥500 USD $0.112718
≥1000 USD $0.109725

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75A
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5Ohm
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 140mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 20V

Dimensions

Height 700μm
Length 1.58mm
Width 760μm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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