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SI2302DDS-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V
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Inventory: 31482
Minimum: 1
Total Price: USD $0.02
Unit Price: USD $0.017713
≥1 USD $0.017713
≥10 USD $0.017192
≥100 USD $0.016671
≥500 USD $0.01602

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 710mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 710mW
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 57m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.9A Tj
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Rise Time 7 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.057Ohm
DS Breakdown Voltage-Min 20V

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