Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 165MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.25W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 7.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 2.4V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
Rise Time 14 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.6 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) -2.3A
Threshold Voltage -1.3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 12A
Recovery Time 18 ns
Nominal Vgs -1.3 V