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DMN3018SSS-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-Channel 30 V 21 mO 13.2 nC SMT Enhancement Mode Mosfet - SOIC-8
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Inventory: 9382
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.3696
≥1 USD $0.3696
≥10 USD $0.28644
≥100 USD $0.172141
≥500 USD $0.159353
≥1000 USD $0.108358

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 697pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.3A Ta
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Rise Time 4.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 20.1 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 5.5A
Drain to Source Breakdown Voltage 30V

Dimensions

Height 1.5mm
Length 4.95mm
Width 3.95mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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