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BC549BTF

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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Inventory: 17288
Minimum: 1
Total Price: USD $0.36
Unit Price: USD $0.36036
≥1 USD $0.36036
≥10 USD $0.24948
≥100 USD $0.121506
≥500 USD $0.101382
≥1000 USD $0.070436

Technical Details

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON

Dimensions

Height 4.58mm
Length 4.58mm
Width 3.86mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW NOISE
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 500mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC549
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 110

Alternative Model

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