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APT27ZTR-G1

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces
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Inventory: 13547
Minimum: 1
Total Price: USD $13.87
Unit Price: USD $13.867245
≥1 USD $13.867245
≥10 USD $11.378483
≥100 USD $11.022375
≥500 USD $10.667265
≥1000 USD $10.311158

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Weight 453.59237mg

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 800mW
Polarity NPN
Element Configuration Single
Power - Max 800mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 100mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 40mA, 200mA
Collector Emitter Breakdown Voltage 450V
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 800mA
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 450V
Emitter Base Voltage (VEBO) 9V
Continuous Collector Current 800mA

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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