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Transistors - Bipolar (BJT) - Single
2SA1312-BL(TE85L,F

2SA1312-BL(TE85L,F

Toshiba Semiconductor and Storage

RoHS

RoHS compliant

Package TO-236-3, SC-59, SOT-23-3

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R

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Pricing & Ordering

Inventory: 15027

Minimum: 1

Total Price: USD $0.05

Unit Price: USD $0.053923

≥1 USD $0.053923

≥10 USD $0.052337

≥100 USD $0.050751

≥500 USD $0.048768

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Contact Plating Copper, Silver, Tin

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-236-3, SC-59, SOT-23-3

Number of Pins 3

Technical

Operating Temperature 125°C TJ

Packaging Cut Tape (CT)

Published 2009

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Power Dissipation 150mW

Frequency 100MHz

Number of Elements 1

Element Configuration Single

Power Dissipation 150mW

Gain Bandwidth Product 100MHz

Transistor Type PNP

Collector Emitter Voltage (VCEO) 300mV

Max Collector Current 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 2mA 6V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA

Collector Emitter Breakdown Voltage 120V

Collector Emitter Saturation Voltage -300mV

Max Breakdown Voltage 120V

Collector Base Voltage (VCBO) -120V

Emitter Base Voltage (VEBO) -5V

hFE Min 200

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Dimensions

Height 1.1mm

Length 2.9mm

Width 1.5mm

Alternative Model

Microsemi Corporation

Diodes Incorporated

Micro Commercial Co

GSXF100A040S1-D3

Semtech Corporation

Taiwan Semiconductor Corporation

ON Semiconductor

SMC Diode Solutions

RJH60F3DPQ-A0#T0

Renesas Electronics America

Comchip Technology

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