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DXTN07100BP5-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package PowerDI? 5
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description DIODES INC. DXTN07100BP5-13 Bipolar (BJT) Single Transistor, POWERDI5, NPN, 100 V, 175 MHz, 3.2 W, 2 A, 200 hFE
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Inventory: 4044
Minimum: 1
Total Price: USD $0.59
Unit Price: USD $0.59136
≥1 USD $0.59136
≥10 USD $0.515592
≥100 USD $0.356941
≥500 USD $0.298267
≥1000 USD $0.253842
≥3000 USD $0.226076

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerDI? 5
Number of Pins 3
Weight 95.991485mg
Transistor Element Material SILICON
Manufacturer Package Identifier POWERDI-5

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 3.2W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3.2W
Power - Max 740mW
Transistor Application SWITCHING
Gain Bandwidth Product 175MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
JEDEC-95 Code TO-252
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 175MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
hFE Min 100

Alternative Model

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