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Package 3-SSIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 50V 0.5A NS-B1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case 3-SSIP
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2003
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 300mW
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2SD1423
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 150mA 10V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Frequency - Transition 200MHz

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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