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2N5686G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-204AE
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Propósito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE
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Inventory: 219
Minimum: 1
Total Price: USD $6.32
Unit Price: USD $6.315442
≥1 USD $6.315442
≥10 USD $6.129694
≥100 USD $5.943946
≥500 USD $5.71176

Technical Details

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mounting Type Through Hole
Package / Case TO-204AE
Surface Mount NO
Number of Pins 2
Transistor Element Material SILICON

Dimensions

Height 8.51mm
Length 38.86mm
Width 26.67mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 300W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 50A
Frequency 2MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5686
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 50A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 25A 2V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 5V @ 10A, 50A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 15

Alternative Model

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